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參數(shù)資料
| 型號(hào)： | AP9962M |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | AP9962M |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
AP9962M
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(
T
c
=25
o
C
Single Pulse
1s
1ms
10ms
100ms
DC
10
100
1000
10000
1
5
9
13
17
21
25
29
VDS (V)
C
f=1.0MHz
Ciss
Crss
Coss
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
35
Q
G
, Total Gate Charge (nC)
V
G
V
DS
=20V
V
DS
=25V
V
DS
=32V
I
D
=7A
0.8x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
0.5x RATED V
DS
TO THE
-
+
10V
D
G
S
V
DS
V
GS
R
G
R
D
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 135
℃
/W
t
T
0.02
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP9963AGP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963AGS-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9963GS-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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