參數(shù)資料
型號(hào): AP9962GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類(lèi): JFETs
英文描述: 7 A, 40 V, 0.025 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 211K
代理商: AP9962GM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
40V
▼ Single Drive Requirement
RDS(ON)
25mΩ
▼ Surface Mount Package
ID
7A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
/W
Data and specifications subject to change without notice
RoHS-compliant Product
1
AP9962GM
200901202
Parameter
Rating
Drain-Source Voltage
40
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
7
Continuous Drain Current
3, V
GS @ 10V
5.5
Pulsed Drain Current
1
20
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.016
Thermal Data
Parameter
Storage Temperature Range
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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