參數(shù)資料
型號: AP9962GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 32 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 98K
代理商: AP9962GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
40V
▼ Single Drive Requirement
RDS(ON)
20mΩ
▼ Surface Mount Package
ID
32A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
4.5
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.22
Pulsed Drain Current
1
150
Total Power Dissipation
27.8
Continuous Drain Current, VGS @ 10V
32
Continuous Drain Current, VGS @ 10V
20
Rating
Drain-Source Voltage
40
Gate-Source Voltage
+20
1
AP9962GH/J
RoHS-compliant Product
200907164
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Parameter
G
D
S
G D
S
TO-252(H)
G
D
S
TO-251(J)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9962GJ) are
available for low-profile applications.
相關PDF資料
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相關代理商/技術參數(shù)
參數(shù)描述
AP9962GM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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