參數(shù)資料
型號(hào)： AP9620GM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： 9.5 A, 20 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, SOP-8
文件頁數(shù)： 2/6頁
文件大?。?/td> 90K
代理商： AP9620GM
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.037
-
V/
℃
R
DS(ON)
V
GS
=-4.5V, I
D
=-9.5A
-
-
20
m
Ω
V
GS
=-2.5V, I
D
=-6.0A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-9.5A
V
DS
=-20V, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=
I
D
=-9.5A
V
DS
=-10V
V
GS
=-5V
V
DS
=-10V
I
D
=-9.5A
R
G
=6
Ω
,
V
GS
=-4.5V
R
D
=1.05
Ω
V
GS
=0V
V
DS
=-15V
f=1.0MHz
-
-
35
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-
-
-
-1
-
V
S
uA
28
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
-1
-25
±
100
Drain-Source Leakage Current (T
j
=70
o
C)
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
30
6
3.5
26
500
70
-
-
-
-
-
-
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
300
2158
845
230
-
-
-
-
ns
pF
pF
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Test Conditions
V
D
=V
G
=0V , V
S
=-1.2V
T
j
=25
℃
, I
S
=-2.5A, V
GS
=0V
Min.
-
-
Typ. Max. Units
-
-2.08
-
-1.2
Continuous Source Current ( Body Diode )
Forward On Voltage
2
A
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
℃
/W when mounted on Min. copper pad.
AP9620GM
±
8V
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