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參數(shù)資料
| 型號： | AP95T06BGP |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 114K |
| 代理商： | AP95T06BGP |
AP95T06BGP
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
50
100
150
200
250
02468
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10 V
9.0 V
8.0 V
7.0 V
V G = 6 .0V
0
40
80
120
160
02
468
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
10 V
9.0 V
8.0 V
7.0 V
V G = 6.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =45A
V G =10V
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
6
10
14
18
22
26
30
4567
89
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20A
T C =25
o C
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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