參數(shù)資料
型號: AP9575GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 4 A, 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, SOP-8
文件頁數(shù): 1/4頁
文件大小: 70K
代理商: AP9575GM
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On-resistance
BVDSS
-60V
▼ Simple Drive Requirement
RDS(ON)
90mΩ
▼ Fast Switching Characteristic
ID
-4A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
50
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Continuous Drain Current
3
-3.2
Pulsed Drain Current
1
-20
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Pb Free Plating Product
200302041
AP9575GM
Rating
-60
±25
-4.0
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
S
G
D
SO-8
G
D
S
相關PDF資料
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AP9576GM 60 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
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