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參數(shù)資料
| 型號： | AP9575GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 16 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | AP9575GI |
AP9575GI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
50
70
90
110
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=-8A
T
C
=25
℃
0
10
20
30
40
50
0
4
8
12
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
C
=25
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
=-3.0V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
= -10A
V
G
= -10V
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, Source-to-Drain Voltage (V)
-
S
(
T
j
=25
o
C
T
j
=150
o
C
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
10
20
30
40
50
0
4
8
12
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
C
=150
o
C
-10V
-7.0V
-5.0V
-4.5V
V
G
= -3.0V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9575GI_09 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP9575GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic |
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