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參數(shù)資料
| 型號(hào)： | AP9566GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.5 A, 40 V, 0.072 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | AP9566GM |
AP9566GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
10
20
30
40
02468
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A =25
o C
-10 V
-7.0 V
-6.0 V
-5.0 V
V G = -4.0 V
0
10
20
30
02468
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Cu
rre
n
t(A)
T A = 150
o C
-10 V
-7.0 V
-6.0 V
-5.0 V
V G = -4.0 V
50
60
70
80
90
2468
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-3 A
T A =25 ℃
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(
ON)
I D =-4 A
V G =-10V
1
1.4
1.8
2.2
2.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
-V
GS(
th)
(V
)
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S
(A
)
T j =25
o C
T j =150
o C
3
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