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| 型號(hào)： | AP9467GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 40 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | AP9467GM |
5
2003 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SR12
PIN Descriptions
For negative events, the bottom diode will be biased
when the voltage exceeds the V
F of the diode.
At first
approximation, the clamping voltage due to the charac-
teristics of the protection diodes is given by:
V
C = VCC + VF
(for positive duration pulses)
V
C = -VF
(for negative duration pulses)
However, for fast rise time transient events, the
effects of parasitic inductance must also be consid-
ered as shown in Figure 2. Therefore, the actual
clamping voltage seen by the protected circuit will be:
V
C = VCC + VF + LP diESD/dt (for positive duration pulses)
V
C = -VF - LG diESD/dt
(for negative duration pulses)
ESD current reaches a peak amplitude of 30A in 1ns
for a level 4 ESD contact discharge per IEC 1000-4-2.
Therefore, the voltage overshoot due to 1nH of series
inductance is:
V = L
P diESD/dt = 1X10
-9
(30 / 1X10-9) = 30V
Example:
Consider a V
CC = 5V, a typical VF of 30V (at 30A) for the
steering diode and a series trace inductance of 10nH.
The clamping voltage seen by the protected IC for a
positive 8kV (30A) ESD pulse will be:
V
C = 5V + 30V + (10nH X 30V/nH) = 335V
This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any
components that are attached to that rail. Also note
that it is not uncommon for the V
F of discrete diodes to
exceed the damage threshold of the protected IC. This
is due to the relatively small junction area of typical
discrete components. It is also possible that the
power dissipation capability of the discrete diode will
be exceeded, thus destroying the device.
The RailClamp is designed to overcome the inherent
disadvantages of using discrete signal diodes for ESD
suppression. The RailClamp’s integrated TVS diode
helps to mitigate the effects of parasitic inductance in
Figure 1 - “Rail-
Figure 1 - “Rail-TTTTTo-Rail” Pr
o-Rail” Pr
o-Rail” Proooootttttection T
ection T
ection Topology
opology
(First Approximation)
Figure 2 - The Effects of Parasitic Inductance
When Using Discrete Components to Implement
Rail-
Rail-TTTTTo-Rail Pr
o-Rail Pr
o-Rail Proooootttttection
ection
Figure 3 - Rail-
Figure 3 - Rail-TTTTTo-Rail Pr
o-Rail Pr
o-Rail Proooootttttection Using
ection Using
RailClam
RailClamp T
p T
p T VVVVVS Arra
S Arra
S Arrays
ys
Applications Information (continued)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9467GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9468GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9468GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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