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參數(shù)資料
| 型號： | AP9451GG |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 70K |
| 代理商： | AP9451GG |
AP9451GG
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V, ID=-2.3A
-
135
mΩ
VGS=-2.5V, ID=-1.0A
-
240
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-1.5
V
gfs
Forward Transconductance
VDS=-5V, ID=-2.3A
-
2.3
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-20V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-16V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
nA
Qg
Total Gate Charge
2
ID= -2.3A
-
5.5
9
nC
Qgs
Gate-Source Charge
VDS= -15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS= -4.5V
-
2.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=-10V
-
9
-
ns
tr
Rise Time
ID=-1A
-
25
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
20
-
ns
tf
Fall Time
RD=10Ω
-10
-
ns
Ciss
Input Capacitance
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS= -20V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
35
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
Tj=25℃, IS=-1A, VGS=0V
-
-1.6
V
t
rr
Reverse Recovery Time
2
IS= -2.5A, VGS=0V,
-
27
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
27
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mount on FR4 board, t ≦ 10s.
2/4
±100
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PDF描述 |
|---|---|
| AP9452GG-HF | 4 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP9465AGJ | 15 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9465AGH | 15 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP9465BGJ | 20 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP9465BGH | 20 A, 40 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9451GG-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline |
| AP9452AGG-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Single Drive Requirement |
| AP9452G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9452GG | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9452GG_08 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower gate charge, Capable of 2.5V gate drive |
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