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參數資料
| 型號： | AP9435K |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | P溝道增強型功率MOSFET |
| 文件頁數： | 4/4頁 |
| 文件大小： | 73K |
| 代理商： | AP9435K |
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP9435K
0
2
4
6
8
10
12
14
0
2
4
Q
G
, Total Gate Charge (nC)
6
8
10
12
14
16
18
-
G
I
D
= -5.3A
V
DS
= -24V
10
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
T
A
=25
o
C
Single Pulse
1s
1ms
10ms
100ms
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
Rthja = 120
℃
/W
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