參數(shù)資料
型號: AP9408AGH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 53 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/5頁
文件大?。?/td> 143K
代理商: AP9408AGH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
10mΩ
▼ Fast Switching Characteristic
ID
53A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data & specifications subject to change without notice
200810283
1
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
Gate-Source Voltage
±20
Continuous Drain Current
53
Continuous Drain Current
33
Pulsed Drain Current
1
160
Parameter
Rating
Drain-Source Voltage
30
AP9408AGH
44.6
RoHS-compliant Product
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
相關PDF資料
PDF描述
AP9408GJ 57 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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