參數(shù)資料
型號: AP9406MP
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOP-8
文件頁數(shù): 1/4頁
文件大?。?/td> 69K
代理商: AP9406MP
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low On-resistance
RDS(ON)
18mΩ
▼ Fast Switching Characteristic
ID
10.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
42
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
3
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Storage Temperature Range
Continuous Drain Current
3
8.2
Pulsed Drain Current
1
50
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201019041
AP9406MP
Rating
30
±20
10.3
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The exposed pad SO-8 package provides the backside heat sink
(Drain) to release thermal and reduce the package temperature and is
good for low voltage applications such as high current DC/DC
converters.
S
G
D
Exposed pad SO-8
(Drain contact on the Backside)
G
D
S
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