參數(shù)資料
型號(hào): AP90T03GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/1頁
文件大小: 206K
代理商: AP90T03GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower On- resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
4mΩ
▼ Fast Switching Characteristic
ID
75A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
200802182
AP90T03GH/J
Parameter
Rating
RoHS-compliant Product
Drain-Source Voltage
30
Gate-Source Voltage
±20
Continuous Drain Current, VGS @ 10V
75
Continuous Drain Current, VGS @ 10V
63
Pulsed Drain Current
1
350
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.7
Storage Temperature Range
Total Power Dissipation
96
-55 to 150
1
Thermal Data
Parameter
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP90T03GJ)
is available for low-profile applications.
G
D
S
TO-251(J)
G
D S
TO-252(H)
G
D
S
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