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參數(shù)資料
| 型號(hào)： | AP90T03GHR |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, REVERSE TO-252, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | AP90T03GHR |
AP90T03GHR
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
100
120
140
160
012345
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =1 50
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0
5
10
15
20
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V SD , Source-to-Drain Voltage (V)
Is
(
A
)
T j =25
o C
T j =150
o C
0
40
80
120
160
200
0123
V DS , Drain-to-Source Voltage (V)
I D
,Dr
ai
n
C
u
rr
ent
(A
)
T C =25
o C
10V
7.0V
5.0V
4.5V
V G =3.0V
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =45 A
V G =10V
0
0.5
1
1.5
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
3.5
4.0
4.5
5.0
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I D =30A
T C =25
o C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP90T03GI | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Fast Switching Performance, Single Drive Requirement |
| AP90T03GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On- resistance, Simple Drive Requirement |
| AP90T03GR | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP90T03GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On- resistance, Simple Drive Requirement |
| AP90T03GS-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower On- resistance, Simple Drive Requirement |
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