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參數(shù)資料
| 型號： | AP72T03GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 62 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | AP72T03GJ |
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP72T03GH/J
0
2
4
6
8
10
0
8
16
24
32
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
So
urce
Vo
lta
g
e(
V
)
V DS =15 V
V DS =18 V
V DS =24 V
I D =30 A
0
400
800
1200
1600
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
No
rm
a
lized
T
h
erm
a
lResp
o
n
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off) t
f
VDS
VGS
10%
90%
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| AP72T03GH | 62 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
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