參數(shù)資料
型號: AP70T03GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 83K
代理商: AP70T03GJ
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
30V
9m
Ω
60A
Low Gate Charge
Fast Switching
RoHS Compliant
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=100
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
2.8
110
Units
/W
/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data and specifications subject to change without notice
200823053-1/4
AP70T03GH/J
Pb Free Plating Product
Parameter
Rating
30
±20
60
43
195
53
0.36
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
-55 to 175
-55 to 175
Operating Junction Temperature Range
Thermal Data
Parameter
G
D
S
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03GJ) are available for low-profile applications.
GD
S
TO-252(H)
GD
S
TO-251(J)
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