參數(shù)資料
型號(hào)： AP6921GMT-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 34 A, 30 V, 0.0115 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 128K
代理商： AP6921GMT-HF
CH-1 Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=10A
-
11.5
m
VGS=4.5V, ID=6A
-
21.5
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
22
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
9
14.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
7
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-18
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
700
1120
pF
Coss
Output Capacitance
VDS=15V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=10A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
12
-
nC
AP6921GMT-HF
2
相關(guān)PDF資料
PDF描述
AP70L02GH 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP70L02GJ 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP70T03GS 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP70T03GP 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP70U02GH 60 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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