參數(shù)資料
型號: AP640R1-00
廠商: Alpha Industries, Inc.
英文描述: 18-40 GHz GaAs MMIC High Isolation SPST Reflective PIN Switch
中文描述: 18-40 GHz的砷化鎵微波單片集成電路高隔離聚苯乙烯反光PIN開關(guān)
文件頁數(shù): 1/2頁
文件大小: 58K
代理商: AP640R1-00
Alpha Industries, Inc.
[781] 935-5150
Fax
[617] 824-4579
Email
sales@alphaind.com
www.alphaind.com
Specifications subject to change without notice. 3/00A
1
18–40 GHz GaAs MMIC
High Isolation SPST Reflective PIN Switch
Features
I
Broad Bandwidth
I
Low Loss, < 1.3 dB
I
High Isolation, > 37 dB
I
Excellent Return Loss, < -13 dB
I
Fast Switching Speed, 4 ns
I
High Power Handling, 37 dBm Peak,
33 dBm CW
Description
Alpha’s high isolation, single pole, single throw PIN diode
switch is a robust, high performance switch.It is ideal for
low loss, high isolation applications, particularly where
broad bandwidths and high power handling is required.
The chip uses Alpha’s proven PIN diode technology, and
is based upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process.The GaAs MMIC employs
two shunt PIN diodes and an on-chip bias network.Chips
are measured on a 100% basis at 24, 28, 31 and 35 GHz
for insertion loss, isolation, input and output return losses,
and also at DC for diode breakdown voltage and turn on
voltage.
Dimensions indicated in mm.
All pads are
0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter
Symbol
IL
Condition
Min.
Typ.
2
1.0
1.3
42
36
14
24
14
22
2
4
33
Max.
1.3
1.9
Unit
dB
dB
dB
dB
dB
dB
dB
dB
μ
A
ns
dBm
Insertion Loss
F = 18, 21, 24, 28, 31, 35 GHz
F = 38, 40 GHz
F = 18, 21, 24, 28, 31, 35 GHz
F = 38, 40 GHz
F = 18, 21 GHz
F = 24, 28, 31, 35, 38, 40 GHz
F = 18, 21 GHz
F = 24, 28, 31, 35, 38, 40 GHz
V = -50 V
Isolation
ISO
37
33
Input Return Loss (Insertion State)
RL
I
12
15
12
13
20
Output Return Loss (Insertion State)
RL
O
Leakage Current
Switching Speed
1
Output Power at 1 dB Compression
1
I
DD
P
1 dB
F = 35 GHz
Electrical Specifications at 25°C
0
0.000
1
0.670
0.313
0.585
0
0
1
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature
-55
°
C to +125
°
C
Storage Temperature
-65
°
C to +150
°
C
DC Reverse Bias
-70 V (-20 mA)
DC Forward Bias
+1.3 V (100 mA)
P
IN
10 W
AP640R1-00
1. Not measured on a 100% basis.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
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