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參數(shù)資料
| 型號(hào)： | AP630GP |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | AP630GP |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
200V
400m
Ω
9A
▼
▼
▼
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
P
D
@T
C
=25
℃
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Units
V
V
A
A
A
W
W/
℃
mJ
A
mJ
E
AS
I
AR
E
AR
T
STG
T
J
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
1.7
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Data & specifications subject to change without notice
AP630GP
Parameter
Rating
200
Pb Free Plating Product
Drain-Source Voltage
Gate-Source Voltage
9
5.7
36
74
0.59
240
9
7
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
-55 to 150
-55 to 150
200219032
Parameter
±
30
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP630GP) is available for low-profile
applications.
G
DS
TO-220
G
D
S
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP630P | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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