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參數(shù)資料
| 型號(hào)： | AP50T03GJ |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大小： | 77K |
| 代理商： | AP50T03GJ |
AP50T03GH/J
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
VG
4.5V
QGS
QGD
QG
Charge
0
3
6
9
12
010
20
30
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
V DS =15V
V DS =20V
V DS =24V
I D =25 A
100
1000
1
5
9
131721
2529
V DS ,Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
C iss
C oss
C rss
0
20
40
60
02
46
8
10
V GS , Gate-to-Source Voltage (V)
I
D
,
Drain
Current
(A)
T j =150
o C
T j =25
o C
V DS =5V
1
10
100
1000
0.1
1
10
100
V DS ,Drain-to-Source Voltage (V)
I
D
(A)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
No
rm
a
lize
d
The
rm
a
lRe
sp
o
n
se
(R
thjc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
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