參數(shù)資料
型號(hào)： AP4800BGM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 94K
代理商： AP4800BGM
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=9A
-
9.6
18
m
VGS=4.5V, ID=7A
-
17.8
35
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.5
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
22
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=9A
-
9.5
15.2
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-21
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
700
1120
pF
Coss
Output Capacitance
VDS=15V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
3
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2.1A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=9A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2
AP4800BGM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP4800BGM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance
AP4800CGM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement
AP4800CGM-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 14MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:10.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.014ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:2.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 14MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain
AP4800DGM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement
AP4800GM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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