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參數(shù)資料
| 型號(hào)： | AP4575GH-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 60 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-252, 5 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 120K |
| 代理商： | AP4575GH-HF |
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
60
-
V
VGS=10V, ID=6A
-
36
m
VGS=4.5V, ID=4A
-
42
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
12.5
-
S
IDSS
Drain-Source Leakage Current
VDS=48V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=5A
-
12
19.2
nC
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
2
VDS=30V
-
7
-
ns
tr
Rise Time
ID=5A
-
10.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-23
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
975
1560
pF
Coss
Output Capacitance
VDS=25V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2.4A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=5A, VGS=0V
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
22
-
nC
2
AP4575GH-HF
N-CH Electrical Characteristics@ Tj=25
oC(unless otherwise specified)
RDS(ON)
Static Drain-Source On-Resistance
2
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