參數(shù)資料
型號: AP4533GEM-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.018 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT, SOP-8
文件頁數(shù): 3/7頁
文件大?。?/td> 84K
代理商: AP4533GEM-HF
AP4533GEM-HF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-6A
-
36
VGS=-4.5V, ID=-4A
-
65
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
9.4
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+30
uA
Qg
Total Gate Charge
2
ID=-6A
-
9
14.5
nC
Qgs
Gate-Source Charge
VDS=-15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5.5
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
8
-
ns
tr
Rise Time
ID=-1A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=15Ω
-20
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=-25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-1.5A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-6A, VGS=0V
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
相關PDF資料
PDF描述
AP4537GYT-HF 30 V, 0.03 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AP4575GH-HF 60 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
AP4800BGM 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4813GSM-HF 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4820GYT-HF 15 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AP4537GYT-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance
AP4539GM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Lower Gate Charge
AP454.3 制造商:PCTEL 功能描述:ANTENNA UNIT
AP4543GEH-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Good Thermal Performance
AP4543GEM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Fast Switching Performance