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參數(shù)資料
| 型號(hào)： | AP4531GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 206K |
| 代理商： | AP4531GM |
2SA1934
2006-11-09
4
Ambient temperature Ta (°C)
PC – Ta
Colle
ctor
p
ower
d
issip
atio
n
P
C
(
W
)
Collector current IC (A)
VBE (sat) – IC
Base-emi
tter
sa
tura
tion
vol
tage
V
BE
(sat)
(V)
Base-emitter voltage VBE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Colle
ct
or
curr
ent
I C
(A
)
0
0.8
1.2
2.0
25
50
75
100
125
150
175
1.6
0.4
0.003
0.1
0.3
1
3
10
0.5
0.01
0.03
0.1
0.3
1
3
5
0.05
Common emitter
IC/IB = 20
Ta = 55°C
25
100
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
0.03
0.1
1
10
100
0.05
0.1
0.3
0.5
1
3
5
10
DC operation
Ta = 25°C
100 μs*
10 ms*
1 ms*
VCEO max
0.03
100 μs*
Common emitter
VCE = 1 V
Ta = 100°C
0
0.2
0.4
0.6
0.8
1.0
1.4
1
2
3
4
5
55
25
1.2
Pulse width tw (s)
rth – tw
T
ransie
nt
th
ermal
r
esi
st
an
ce
r th
(
°C
/W
)
0.001
1000
0.01
0.1
100
10
1
300
10
100
30
0.3
3
1
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
No heat sink
Ta = 25°C
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