參數(shù)資料
型號: AP4526GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 7.6 A, 40 V, 0.032 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: ROHS COMPLIANT PACKAGE-5
文件頁數(shù): 3/8頁
文件大?。?/td> 190K
代理商: AP4526GH
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-5A
-
42
VGS=-4.5V, ID=-3A
-
60
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-40V, VGS=0V
-
-10
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-32V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=-5A
-
12
19
nC
Qgs
Gate-Source Charge
VDS=-32V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6.6
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
8
-
ns
tr
Rise Time
ID=-5A
-
33
-
ns
td(off)
Turn-off Delay Time
RG=3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=4Ω
-68
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=-25V
-
110
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-2.4A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-5A, VGS=0V
-
23
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
17
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
AP4526GH
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
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