參數(shù)資料
型號: AP4513GD
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30V N-Channel PowerTrench MOSFET
中文描述: 5.8 A, 35 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, PLASTIC, DIP-8
文件頁數(shù): 1/7頁
文件大?。?/td> 92K
代理商: AP4513GD
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low Gate Charge
Fast Switching Speed
PDIP-8 Package
RoHS Compliant
N-CH
BV
DSS
R
DS(ON)
I
D
BV
DSS
R
DS(ON)
I
D
35V
36m
Ω
5.8A
-35V
68m
Ω
-4.3A
P-CH
Description
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
35
±20
Units
P-channel
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
4
Avalanche Current
Repetitive Avalanche Energy
1
Storage Temperature Range
Operating Junction Temperature Range
-35
±20
V
V
5.8
4.7
20
-4.3
-3.4
-20
A
A
A
W
W/
mJ
A
mJ
E
AS
I
AR
E
AR
T
STG
T
J
12.5
5
0.05
12.5
-5
0.05
Symbol
Value
62.5
Unit
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Parameter
200615051-1/7
Thermal Data
AP4513GD
Pb Free Plating Product
-55 to 150
-55 to 150
2
0.016
G2
D2
S2
G1
D1
S1
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
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