參數(shù)資料
型號: AP4410M
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE
中文描述: N溝道增強模式
文件頁數(shù): 1/4頁
文件大?。?/td> 81K
代理商: AP4410M
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching
Simple Drive Requirement
BV
DSS
R
DS(ON)
I
D
30V
13.5m
Ω
10A
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
I
D
@T
A
=70
I
DM
P
D
@T
A
=25
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
T
STG
T
J
Symbol
Value
50
Unit
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
2.5
-55 to 150
-55 to 150
0.02
Continuous Drain Current
3
Pulsed Drain Current
1
8
50
Gate-Source Voltage
Continuous Drain Current
3
10
Parameter
Rating
30
Drain-Source Voltage
200606032
AP4410M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
±
25
S
S
S
G
D
D
D
D
SO-8
G
D
S
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