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參數(shù)資料
| 型號(hào)： | AP4232GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | AP4232GM |
AP4232GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
10
20
30
40
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
10
20
30
40
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
15
20
25
30
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=5A
T
A
=25
℃
0.7
1.0
1.3
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=7A
V
G
=10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
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|---|---|
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