參數(shù)資料
型號(hào): AP4228M
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù): 3/4頁(yè)
文件大小: 82K
代理商: AP4228M
AP4228M
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
5
10
15
20
25
30
35
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=150
o
C
10V
5.0V
4.0V
V
G
=3.0V
0
5
10
15
20
25
30
35
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
10V
5.0V
4.0V
V
G
=3.0V
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=6A
V
GS
=10V
0
20
40
60
80
2
4
6
8
10
12
V
GS
, Gate-to-Source Voltage (V)
R
D
)
I
D
=6A
T
A
=25
1
1.5
2
2.5
-50
0
T
j
, Junction Temperature (
o
C )
50
100
150
V
G
(
0.1
1
10
0
0.4
0.8
1.2
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
(
Tj=25
o
C
Tj=150
o
C
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