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參數(shù)資料
| 型號： | AP40T03GP |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 28 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 70K |
| 代理商： | AP40T03GP |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
650
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
-
0.6
-
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3.5A
-
-
1.2
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=3.5A
V
DS
=600V, V
GS
=0V
V
DS
=480V
,
V
GS
=0V
V
GS
=±30V
I
D
=7A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=7A
R
G
=10
Ω,
V
GS
=10V
R
D
=43
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
2
-
4
V
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.5
-
-
-
32
8.6
9
17
15
35
18
2075
120
8
-
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=25
o
C)
10
100
±100
-
-
-
-
-
-
-
-
-
-
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
-
-
Max.
7
18
1.5
Units
A
A
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.5V
Pulsed Source Current ( Body Diode )
1
Forward On Voltage
3
T
j
=25
℃
, I
S
=7A, V
GS
=0V
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=5mH , R
G
=25
Ω
, I
AS
=7A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP07N70CP-A
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| AP40T03GS | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03H | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03J | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03S | N-CHANNEL ENHANCEMENT MODE |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP40T03GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03H | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03J | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40T03P | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP40T03S | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
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