參數(shù)資料
型號： AP40P03GP
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 30 A, 30 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù)： 2/5頁
文件大?。?/td> 117K
代理商： AP40P03GP
AP40P03GP
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-18A
-
28
mΩ
VGS=-4.5V, ID=-10A
-
50
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-18A
-
20
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-30V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=-24V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS= ±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=-18A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
12
-
ns
tr
Rise Time
ID=-18A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
30
-
ns
tf
Fall Time
RD=0.8Ω
-57
-
ns
Ciss
Input Capacitance
VGS=0V
-
915
1465
pF
Coss
Output Capacitance
VDS=-25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-18A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
2
IS=-18A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
21
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
2/4
相關(guān)PDF資料
PDF描述
AP40T10GR 40 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AP40U03GH 20 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP4224AGM 9.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP4232BGM-HF 7.6 A, 30 V, 0.022 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AP4407GS 50 A, 30 V, 0.014 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP40SD 功能描述:整流器/與可變電容器 250Volts 1.5pF-40pF RoHS:否 制造商:Xicon 電容范圍:2.8 pF to 12.5 pF 容差: 電壓額定值:200 V 工作溫度范圍:- 35 C to + 85 C 端接類型:SMD/SMT 產(chǎn)品:Trimmer Capacitors - Ceramic Dielectric
AP40T03GH 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GH_08 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GH-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 25MOHM TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:28A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.025ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:31.25W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 25MOHM, TO-252, Transistor Polarity:N Channel, Continuous Drai
AP40T03GI 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*