參數(shù)資料
型號： AP40P03GJ
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： P-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： 30 A, 30 V, 0.028 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 73K
代理商： AP40P03GJ
AP40P03GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-30
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=-1mA
Static Drain-Source On-Resistance
2
-
-0.02
-
V/
℃
R
DS(ON)
V
GS
=-10V, I
D
=-18A
-
-
28
m
Ω
V
GS
=-4.5V, I
D
=-10A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-18A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
= ±20V
I
D
=-18A
V
DS
=-24V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-18A
R
G
=3.3
Ω,
V
GS
=-10V
R
D
=0.8
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
-
-
50
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-3
-
-1
-25
±100
22
-
-
-
-
-
-
1465
-
-
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
20
-
-
-
14
3
9
12
56
30
57
915
280
195
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
30
21
Max.
-1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-18A, V
GS
=0V
I
S
=-18A, V
GS
=0V,
dI/dt=-100A/μs
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
相關(guān)PDF資料
PDF描述
AP40P03GI P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP40T03GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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