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參數(shù)資料
| 型號： | AP40N03GJ-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 36 A, 30 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 97K |
| 代理商： | AP40N03GJ-HF |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP40N03GH/J-HF
0
20
40
60
80
100
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
10V
9.0V
8.0V
7.0V
6.0V
5.0V
4.0V
V G =3.0V
0
40
80
120
160
200
0.0
2.0
4.0
6.0
8.0
10.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
9.0V
8.0V
7.0V
6.0V
5.0V
4.0V
V G =3.0V
0.2
0.8
1.4
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =18A
V G =10V
8
12
16
20
24
28
32
2468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =18A
T C =25 ℃
1
10
100
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
1.0
1.2
1.4
1.6
1.8
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP40N03GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge Simple Drive Requirement |
| AP40N03GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40N03H | 制造商:Advanced Power Electronics Corp 功能描述:ELECTRONIC COMPONENT |
| AP40N03S | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP40P03GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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