參數(shù)資料
型號: AP40G120AW
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: IGBT 晶體管
英文描述: 80 A, 1200 V, N-CHANNEL IGBT
封裝: ROHS COMPLIANT, TO-3P, 3 PIN
文件頁數(shù): 3/3頁
文件大?。?/td> 93K
代理商: AP40G120AW
Fig 7. Reverse Bias SOA
Fig 8. Effective Transient Thermal
Impedance
Fig 9. Saturation Voltage vs. VGE
Fig 10. Saturation Voltage vs. VGE
Fig11. Power Dissipation vs. Junction
Fig 12. Gate Charge Characterisitics
Temperature
3
AP40G120AW
0
4
8
12
16
0
40
80
120
160
200
Q G , Gate Charge (nC)
V
GE
,
G
a
te
-
E
mitte
rVoltage
(
V
)
I C =4 0A
V CC =500V
0
5
10
15
20
04
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Colle
c
tor-
E
mitte
rVoltage
(V
)
I C =80 A
40 A
20 A
T C =25
o C
0
5
10
15
20
04
8
12
16
20
V GE , Gate-Emitter Voltage(V)
V
CE
,
Colle
c
tor-
E
mitte
rVoltage
(V
)
I C = 80A
4 0 A
20 A
T C = 150
o C
1
10
100
1000
10
100
1000
10000
V CE , Collector-Emitter Voltage(V)
I
C
,Pe
ak
C
o
lle
c
tor
C
u
rre
n
t(
A
)
V GE =15V
T j =150
o C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
100
200
300
400
500
0
50
100
150
200
Junction Temperature ( ℃ )
Powe
rD
issipation
(
W
)
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