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參數(shù)資料
| 型號(hào)： | AP4085W |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 500 V, 0.43 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 174K |
| 代理商： | AP4085W |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
500
-
V
RDS(ON)
Static Drain-Source On-Resistance
3
VGS=10V, ID=8A
-
0.43
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
3
-
5
V
gfs
Forward Transconductance
VDS=10V, ID=8A
-
6.3
-
S
IDSS
Drain-Source Leakage Current
VDS=400V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
±100
nA
Qg
Total Gate Charge
3
ID=16A
-
48
77
nC
Qgs
Gate-Source Charge
VDS=200V
-
9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
32
-
nC
td(on)
Turn-on Delay Time
3
VDD=200V
-
48
-
ns
tr
Rise Time
ID=8A
-
134
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
195
-
ns
tf
Fall Time
RD=25Ω
-
121
-
ns
Ciss
Input Capacitance
VGS=0V
-
1205
1930
pF
Coss
Output Capacitance
VDS=30V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
IS=16A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
IS=16A, VGS=0V
-
630
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
13
-
uC
Notes:
1.Pulse width limited by Max junction temperature.
2.Starting Tj=25
oC , V
DD=99V , L=1mH , RG=25Ω
3.Pulse test
2/4
AP4085W
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
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