參數(shù)資料
型號： AP4002S
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, TO-263, 3 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 184K
代理商： AP4002S
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP4002S/P
0
1
10
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
1
100
10000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0
2
4
6
8
10
12
14
0
4
8
12
16
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =2A
V DS =480V
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