參數(shù)資料
型號: AP3989P
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 10 A, 600 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 94K
代理商: AP3989P
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
600
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=5A
-
0.68
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.5
-
S
IDSS
Drain-Source Leakage Current
VDS=480V, VGS=0V
-
100
uA
Drain-Source Leakage Current (Tj=125
oC) VDS=480V, VGS=0V
-
500
uA
IGSS
Gate-Source Leakage
VGS=+30V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=9A
-
48
77
nC
Qgs
Gate-Source Charge
VDS=480V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
td(on)
Turn-on Delay Time
2
VDD=300V
-
16
-
ns
tr
Rise Time
ID=9A
-
25
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
70
-
ns
tf
Fall Time
RD=33.3Ω
-35
-
ns
Ciss
Input Capacitance
VGS=0V
-
2150 3440
pF
Coss
Output Capacitance
VDS=25V
-
355
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
28
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=9A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
2
IS=9A, VGS=0V
-
570
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
9.7
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3989P
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