參數(shù)資料
型號(hào)： AP34M60S
廠商： MICROSEMI CORP
元件分類(lèi)： JFETs
英文描述： 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, D3PAK, 3 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 396K
代理商： AP34M60S
Static Characteristics
TJ = 25°C unless otherwise specied
Source-Drain Diode Characteristics
Dynamic Characteristics
TJ = 25°C unless otherwise specied
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T
J = 25°C, L = 6.44mH, RG = 4.7, IAS = 17A.
3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
4 C
o(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 C
o(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -8.03E-8/VDS^2 + 2.80E-8/VDS + 9.89E-11.
6 R
G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.
G
D
S
Unit
V
V/°C
V
mV/°C
A
nA
Unit
A
V
ns
C
V/ns
Unit
S
pF
nC
ns
Min
Typ
Max
600
0.57
0.17
0.21
3
4
5
-10
100
500
±100
Min
Typ
Max
100
124
1
570
11.8
8
Min
Typ
Max
32
6640
70
610
325
170
165
36
70
37
43
115
34
Test Conditions
V
GS = 0V, ID = 250A
Reference to 25°C, I
D = 250A
V
GS = 10V, ID = 17A
V
GS = VDS, ID = 1mA
V
DS = 600V
T
J = 25°C
V
GS = 0V
T
J = 125°C
V
GS = ±30V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
I
SD = 17A, TJ = 25°C, VGS = 0V
I
SD = 17A
3
di
SD/dt = 100A/s, TJ = 25°C
I
SD ≤ 17A, di/dt ≤1000A/s, VDD = 400V,
T
J = 125°C
Test Conditions
V
DS = 50V, ID = 17A
V
GS = 0V, VDS = 25V
f = 1MHz
V
GS = 0V, VDS = 0V to 400V
V
GS = 0 to 10V, ID = 17A,
V
DS = 300V
Resistive Switching
V
DD = 400V, ID = 17A
R
G = 4.7
6
, V
GG = 15V
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery dv/dt
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Symbol
V
BR(DSS)
V
BR(DSS)/TJ
R
DS(on)
V
GS(th)
V
GS(th)/TJ
I
DSS
I
GSS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
Symbol
g
fs
C
iss
C
rss
C
oss
C
o(cr)
4
C
o(er)
5
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
050-8076
Rev
A
9-2006
APT34M60B_S
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