參數(shù)資料
型號(hào)： AP34M60B
廠商： MICROSEMI CORP
元件分類： JFETs
英文描述： 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
封裝： ROHS COMPLIANT, 3 PIN
文件頁數(shù)： 4/4頁
文件大?。?/td> 396K
代理商： AP34M60B
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
D3PAK Package Outline
TO-247 (B) Package Outline
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
D
ra
in
Drain
Source
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
D
ra
in
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Drain
Source
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
0.0846
0.116
0.0122
0.249
Dissipated Power
(Watts)
TJ (°C)
TC (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
E
X
T
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
I
D = ID(TC = 25°C)
*(T
J - TC)/125
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
DC line
100s
I
DM
10ms
13s
100s
I
DM
100ms
10ms
13s
Rds(on)
DC line
T
J = 150°C
T
C = 25°C
1ms
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
Figure 10, Maximum Forward Safe Operating Area
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
I D
,DRAIN
CURRENT
(A)
Figure 11, Transient Thermal Impedance Model
1
10
100
800
1
10
100
800
200
100
10
1
0.1
0.25
0.20
0.15
0.10
0.05
0
200
100
10
1
0.1
APT34M60B_S
T
J = 125°C
T
C = 75°C
050-8076
Rev
A
9-2006
相關(guān)PDF資料
PDF描述
AP34M60S 34 A, 600 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET
AP3986I 6 A, 620 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP3986P 6 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP3987I 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP3987R 7 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
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