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參數(shù)資料
| 型號： | AP3216P3C |
| 廠商： | KINGBRIGHT CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 92K |
| 代理商： | AP3216P3C |
SPEC NO: DSAB4397
REV NO: V.4 DATE: MAR/02/2005 PAGE: 2 OF 3
APPROVED: J. Lu
CHECKED: Allen Liu DRAWN: B.H.LI ERP: 1203000370
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
V
BR CEO
Collector-to-Emitter Breakdown Voltage
30
-
-
V
I
C
=100uA
Ee=0mW/cm
2
V
BR ECO
Emitter-to-Collector Breakdown Voltage
5
-
-
V
I
E
=100uA
Ee=0mW/cm
2
V
CE (SAT)
Collector-to-Emitter Saturation Voltage
-
-
0.8
V
I
C
=2mA
Ee=20mW/cm
2
I
CEO
Collector Dark Current
-
-
100
nA
V
CE
=10V
Ee=0mW/cm
2
T
R
Rise Time (10
％
to 90
％
)
-
3
-
us
V
CE
= 5V
I
C
=1mA
R
L
=1000
T
F
Fall Time (90
％
to 10
％
)
-
3
-
us
I
(ON)
On State Collector Current
0.1
0.3
-
mA
V
CE
= 5V,
Ee=1mW/cm
2
,
λ
=940nm
2
θ
1/2
Viewing Angle
-
120
-
deg
-
Electrical / Optical Characteristics at T
A
=25°C
Absolute Maximum Ratings at T
A
=25°C
Parameter
Max.Ratings
Collector-to-Emitter Breakdown Voltage
30V
Emitter-to-Collector Breakdown Voltage
5V
Power Dissipation at (or below) 25°C Free Air Temperature
100mW
Operating Temperature Range
-40°C ~ +85°C
Storage Temperature Range
-40°C ~ +85°C
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