參數資料
型號: AP2765I-A-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 8 A, 650 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, TO-220CFM, 3 PIN
文件頁數: 4/4頁
文件大小: 58K
代理商: AP2765I-A-HF
AP2765I-A-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
4.3
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
0
2040
6080
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =3.5A
V DS =480V
0
1000
2000
3000
4000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
td(on) tr
td(off)
tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0.01
0.1
1
10
100
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
Operation in this area
limited by RDS(ON)
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