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參數(shù)資料
| 型號(hào)： | AP26G40GEO-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 400 V, N-CHANNEL IGBT |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | AP26G40GEO-HF |
AP26G40GEO-HF
Advanced Power
N-CHANNEL INSULATED GATE
Electronics Corp.
BIPOLAR TRANSISTOR
▼ I
CP=150A @VGE=3.0V
VCE
▼ Low Gate Drive
ICP
▼ Strobe Flash Applications
▼ RoHS Compliant & Halogen-Free
Absolute Maximum Ratings
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Min.
Typ.
Max.
Units
IGES
--
+10
uA
ICES
-
10
uA
VCE(sat)
-
4.5
9
V
VGE(th)
0.3
-
1.2
V
Qg
-
86
138
nC
Qge
-
5.4
-
nC
Qgc
-29
-
nC
td(on)
-
900
-
ns
tr
-
1.6
-
s
td(off)
-
170
-
ns
tf
-
2.3
-
s
Cies
-
5170
8270
pF
Coes
-45
-
pF
Cres
-27
-
pF
RthJA
1
-
125
oC/W
Notes:
1.Surface mounted on 1 in
2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
200908141
VCE=200V
VGE=3V
VCE=30V
RG=10Ω
IC=150A
VGE=0V
Thermal Resistance Junction-Ambient
VGE=4V
Fall Time
1
oC
VCC=320V
Junction Temperature Range
-55 to 150
Test Conditions
Reverse Transfer Capacitance
VGE=3V, ICP=150A (Pulsed)
VCE=VGE, IC=250uA
Gate-Emitter Leakage Current
V
Maximum Power Dissipation
VGEP
ICP
PD@TA=25
oC1
Peak Gate-Emitter Voltage
+ 6
150
1
Pulsed Collector Current, VGE @ 3.0V
A
-55 to 150
oC
W
Symbol
VCE
400V
150A
Rating
Collector-Emitter Voltage
Units
Parameter
V
400
Halogen-Free Product
Input Capacitance
Output Capacitance
f=1.0MHz
Rise Time
Gate-Collector Charge
Turn-on Delay Time
Turn-off Delay Time
IC=40A
Gate-Emitter Charge
TSTG
VGE=+ 6V, VCE=0V
VCE=400V, VGE=0V
TJ
Storage Temperature Range
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Parameter
Collector-Emitter Leakage Current
G
C
E
G
E
C
TSSOP-8
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