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參數(shù)資料
| 型號： | AP2625GY |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 30 V, 0.185 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 96K |
| 代理商： | AP2625GY |
APTGF300U60D4
A
P
T
G
F
300
U
60D
4–
R
ev
0
J
anua
ry,
2005
APT website – http://www.advancedpower.com
2 - 3
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
1
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
1
mA
Tj = 25°C
1.95
2.45
VCE(on)
Collector Emitter on Voltage
VGE = 15V
IC = 300A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 6mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
13
Cres
Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
1.2
nF
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
68
Td(off)
Turn-off Delay Time
320
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 300A
RG = 3.3
45
ns
Td(on)
Turn-on Delay Time
105
Tr
Rise Time
70
Td(off)
Turn-off Delay Time
350
Tf
Fall Time
50
ns
Eon
Turn on Energy
7
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 300A
RG = 3.3
11
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
1.25
1.6
VF
Diode Forward Voltage
IF = 300A
VGE = 0V
Tj = 125°C
1.2
V
ER
Reverse Recovery Energy
Tj = 125°C
7
mJ
Tj = 25°C
19
Qrr
Reverse Recovery Charge
IF = 300A
VR = 300V
di/dt =4000A/s
Tj = 125°C
34
C
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
IGBT
0.11
RthJC
Junction to Case
Diode
0.21
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
M6
3
5
Torque Mounting torque
M4
1
2
N.m
Wt
Package Weight
420
g
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2625Y | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2626GY | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2626GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Smaller Outline Package |
| AP2648 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC |
| AP26G40GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
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