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參數(shù)資料
| 型號(hào)： | AP2610GY-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 60 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | AP2610GY-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Fast Switching Characteristic
BVDSS
60V
▼ Lower Gate Charge
RDS(ON)
90mΩ
▼ Small Footprint & Low Profile Package
ID
3.5A
▼ Halogen Free & RoHS Compliant Product
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
AP2610GY-HF
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
+20
Continuous Drain Current
3, V
GS @ 10V
3.5
Storage Temperature Range
Continuous Drain Current
3, V
GS @ 10V
2.8
Pulsed Drain Current
1
14
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
201008231
Thermal Data
Parameter
1
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The S0T-26 package is widely used for commercial-industrial surface
mount applications.
D
G
S
SOT-26
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