參數(shù)資料
型號: AP2319GN-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 3.1 A, 30 V, 0.09 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 2/4頁
文件大?。?/td> 99K
代理商: AP2319GN-HF
AP2319GN-HF
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-2.8A
-
90
m
VGS=-4.5V, ID=-2A
-
150
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=-2A
-
4.3
6.9
nC
Qgs
Gate-Source Charge
VDS=-15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
2
VDS=-15V
-
5.5
-
ns
tr
Rise Time
ID=-1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3,VGS=-10V
-
18.5
-
ns
tf
Fall Time
RD=15
-4
-
ns
Ciss
Input Capacitance
VGS=0V
-
310
500
pF
Coss
Output Capacitance
VDS=-25V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-1.2A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
2
IS=-2A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
相關(guān)PDF資料
PDF描述
AP2320GN-HF 250 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AP2326GN-HF 4.7 A, 30 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2328GN-HF 4 A, 30 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2338GN-HF 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
AP2530AGY-HF 30 V, 0.072 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP2319GN-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET PCH -30V 90MOHM SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 90MOHM, SOT-23 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, PCH, -30V, 90MOHM, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:-3.1A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):0.097ohm, Rds(on) Test Voltage Vgs:-4.5V, Power Dissipation Pd:1.38W, Operating, RoHS Compliant: Yes
AP231SQ 制造商:Thomas & Betts 功能描述:POST BASE GOLDGALV
AP232 制造商:Thomas & Betts 功能描述:POST BASE
AP232 GR 制造商:Thomas & Betts 功能描述:SSTRUT FITTINGS/BRACKETS
AP232 PVC 制造商:Thomas & Betts 功能描述:PVC FINISH POST BASES