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參數(shù)資料
| 型號(hào)： | AP2317GN-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.2 A, 20 V, 0.052 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 93K |
| 代理商： | AP2317GN-HF |
65mΩ
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP2317GN-HF
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D = -4A
V DS = -10V
0.01
0.1
1
10
100
0.1
1
10
100
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 270℃/W
0
200
400
600
800
1000
1200
1
5
9
1317
2125
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.02
Q
VG
QGS
QGD
QG
Charge
-4.5V
td(on) tr
td(off) tf
VDS
VGS
10%
90%
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| AP2326GN-HF | 4.7 A, 30 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2317H-2.5 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR |
| AP2317H-2.5E1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR |
| AP2317H-2.5TR | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR |
| AP2317H-2.5TRE1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR |
| AP2317H-3.3 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:600mA LOW DROPOUT LINEAR REGULATOR |
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