參數(shù)資料
型號： AP2313GN
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 小信號晶體管
英文描述： 2500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/4頁
文件大?。?/td> 75K
代理商： AP2313GN
AP2313GN
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-2.8A
-
120
mΩ
VGS=-4.5V, ID=-2.5A
-
160
mΩ
VGS=-2.5V, ID=-2A
-
300
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-
-1.2
V
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-20V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-16V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±100
nA
Qg
Total Gate Charge
2
ID=-2A
-
5
8
nC
Qgs
Gate-Source Charge
VDS=-16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
2
VDS=-10V
-
6
-
ns
tr
Rise Time
ID=-1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
16
-
ns
tf
Fall Time
RD=10Ω
-5
-
ns
Ciss
Input Capacitance
VGS=0V
-
270
430
pF
Coss
Output Capacitance
VDS=-20V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-1.2A, VGS=0V
-
-1.2
V
trr
Reverse Recovery Time
2
IS=-2A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 360 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
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