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參數(shù)資料
| 型號： | AP2302AGN-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.6 A, 20 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | AP2302AGN-HF |
AP2302AGN-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
0
2
4
6
8
02468
10
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =10V
I D =4A
0
100
200
300
400
500
1
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 270 ℃/W
0.02
Q
VG
4.5V
QGS
QGD
QG
Charge
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Operation in this
area limited by
RDS(ON)
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相關代理商/技術參數(shù) |
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| AP2302D | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:3A DDR TERMINATION REGULATOR |
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