參數(shù)資料
型號(hào): AP20T03GJ
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 12.5 A, 30 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 96K
代理商: AP20T03GJ
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
50mΩ
▼ Fast Switching Characteristic
ID
12.5A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
10
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data & specifications subject to change without notice
Thermal Data
Parameter
Operating Junction Temperature Range
Linear Derating Factor
0.1
Storage Temperature Range
Continuous Drain Current
8
Pulsed Drain Current
1
40
Total Power Dissipation
12.5
-55 to 150
Gate-Source Voltage
+20
Continuous Drain Current
12.5
Parameter
Rating
RoHS-compliant Product
Drain-Source Voltage
30
AP20T03GH/J
200902104
1
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP20T03GJ) is
available for low-profile applications.
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
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